Programme Content
The course provides a graded exposure and training, starting with pn-junction and Schottky diodes, and then moving to more advanced power devices. Silicon-based trench gate power MOSFETs Silicon IGBTs – an introduction Silicon Carbide power MOSFET – comparison with Si MOSFET and IGBT Gallium Nitride power HEMTs Mixed-mode simulation demo of a basic circuit – to demonstrate the connection between devices with applications
